A Two-Dimensional Self-Consistent Numerical Model for High Electron Mobility Transistor

Department

Electrical and Computer Engineering

Document Type

Article

Publication Title

IEEE Transactions on Electron Devices

ISSN

00189383

Volume

38

Issue

4

DOI

10.1109/16.75215

First Page

852

Last Page

861

Publication Date

1-1-1991

Abstract

A new two-dimensional self-consistent numerical model for High Electron Mobility Transistor (HEMT) is presented. In previous two-dimensional models, the quantization of electrons in the quantum well has been treated by using a triangular well approximation in which the width of the quantum well is assumed to be zero and the quantized electrons are assumed to reside right at the heterojunction. In this paper, we do not make the above assumptions. Instead, the spatial spreading of the electron concentration in the quantum well normal to the heterojunction is taken into account by solving Schrödinger’s and Poisson’s equations self-consistently. The Boltzmann transport equation in the form of a current continuity equation and an energy balance equation are solved to obtain the transient and steady-state transport behavior. The id-vd, characteristics, transconductance, gate capacitance, and unity-gain frequency of a single quantum-well HEMT is discussed. Also discussed are the dependencies of the device performance on the gate length and the doping concentration of the Al GaAs layer. © 1991 IEEE

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