Formulation of a self-consistent model for quantum well pin solar cells: Dark behavior

Department

Electrical and Computer Engineering

Document Type

Article

Publication Title

VLSI Design

ISSN

1065514X

Volume

8

Issue

1-4

DOI

10.1155/1998/61791

First Page

419

Last Page

422

Publication Date

1-1-1998

Abstract

A self-consistent numerical simulation model for a pin single-cell solar cell is formulated. The solar cell device consists of a p-AlGaAs region, an intrinsic i-AlGaAs/GaAs region with several quantum wells, and a n-AlGaAs region. Our simulator solves a field-dependent Schrödinger equation self-consistently with Poisson and drift-diffusion equations. The field-dependent Schrödinger equation is solved using the transfer matrix method. The eigenfunctions and eigenenergies obtained are used to calculate the escape rate of carriers from the quantum wells, the capture rates of carriers by the wells, the absorption spectra in the wells, and the non-radiative recombination rates of carriers in the quantum wells. These rates are then used in a self-consistent finite-difference numerical Poisson-drift-diffusion solver. We believe this is the first such comprehensive model ever reported.

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