Sub-2nm Size-Tunable High-Density Pt Nanoparticle Embedded Nonvolatile Memory

Department

Electrical and Computer Engineering

Document Type

Article

Publication Title

Electron Device Letters, IEEE

ISSN

1558-0563

Volume

30

Issue

12

DOI

10.1109/LED.2009.2033618

First Page

1362

Last Page

1364

Publication Date

Fall 1-1-2009

Abstract

The charge-storage characteristics of a metal-oxide-semiconductor (MOS) structure containing size-tunable sub-2 nm Pt nanoparticles (NPs) between Al 2 O 3 tunneling and capping oxide layers were studied. Significantly different amounts of memory window were obtained with the different sizes of Pt NP embedded MOS structures and reached a maximum of 4.3 V using a 1.14 nm Pt NP, which has the strongest charging capability caused by optimum size and the largest particle density obtained in our deposition method. Satisfactory long-term nonvolatility was attained in a low electric field due to the Coulomb blockade and quantum confinement effects in ~ 1 nm Pt NP. These properties are very promising in view of device application.

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