Sensitivity of Strained and Unstrained Structure Growth on GaAs (111)B

Department

Electrical and Computer Engineering

Document Type

Article

Publication Title

Journal of Electronic Materials

ISSN

0361-5235

Volume

41

Issue

5

DOI

10.1007/s11664-012-2071-0

First Page

959

Last Page

964

Publication Date

Fall 1-1-2012

Abstract

Compared with traditional (100) surfaces, the growth window for achieving high-quality photonic device structures on (111) GaAs by conventional molecular beam epitaxy (MBE) is very narrow. However, strained and unstrained structures produced on (111) substrates offer a new class of electronic and optoelectronic devices that benefit from the piezoelectric effect—a feature not accessible on symmetric (100) orientations—and additional material choices, such as InAs and InGaAs. In this work, we report on a series of investigations of strained and unstrained structures that include GaAs, AlGaAs/GaAs, and InAs/GaAs quantum layers deposited on epi-ready GaAs (111)B 2° → [21¯1¯ Si-doped substrates by conventional MBE.

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