Computer simulation of quantum transport in high electron mobility transistor part II: the full quantum transport
Electrical and Computer Engineering
Transactions of the Society for Computer Simulation
A self-consistent full-quantum model in which the electrons in the second subband are treated as quantized 2-dimensional gas is presented. In this model, the electrons in the lower two subbands are considered to be in the quantum well forming the 2-dimensional electron gas, and the electrons in the third and higher subbands to behave as bulk electrons with no restrictions in their motion. An additional self-consistency was further incorporated by calculating the field-dependent, energy-dependent scattering rates due to ionized impurities and polar optical phonons. The rates transfer of electrons and their energies to and from each other subband are calculated from these intersubband and intrasubband scattering rates.
Computer simulation of quantum transport in high electron mobility transistor part II: the full quantum transport.
Transactions of the Society for Computer Simulation, 12(1), 67–81.