Title

Modeling nano-transistors using the Landauer approach

Lead Author Major

Engineering Physics

Lead Author Status

Senior

Format

Poster Presentation

Faculty Mentor Name

Dr. David Mueller

Faculty Mentor Department

Electrical and Computer Engineering

Abstract/Artist Statement

Transistors are the building blocks for modern electronics. As technology improves, the size of the transistor gets smaller and smaller. The mathematical models that we used to use to describe the current-voltage (I-V) characteristics of a transistor no longer apply to devices with such short channel lengths. These developments give rise to new models, including the Landauer approach to carrier transport. This model utilizes a theory of “transmission” to describe the movement of carriers through a nano-scale device. This approach can be applied to more classical models of transistors, such as the MIT Virtual Source (VS) model. The VS model is a semi-empirical yet highly accurate model traditionally used to describe the I-V characteristics of metal-oxide-semiconductor field effect transistors (MOSFETs) from the linear region of operation all the way through the saturation region. The goal of this project is to use the Landauer approach and transmission theory of the MOSFET applied to the MIT Virtual Source model to simulate the I-V characteristics of an extremely thin silicon on insulator (ETSOI) N-MOSFET, as well as a III-V high electron mobility transistor (HEMT).

Location

Virtual

Start Date

25-4-2020 1:00 PM

End Date

25-4-2020 3:00 PM

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Apr 25th, 1:00 PM Apr 25th, 3:00 PM

Modeling nano-transistors using the Landauer approach

Virtual

Transistors are the building blocks for modern electronics. As technology improves, the size of the transistor gets smaller and smaller. The mathematical models that we used to use to describe the current-voltage (I-V) characteristics of a transistor no longer apply to devices with such short channel lengths. These developments give rise to new models, including the Landauer approach to carrier transport. This model utilizes a theory of “transmission” to describe the movement of carriers through a nano-scale device. This approach can be applied to more classical models of transistors, such as the MIT Virtual Source (VS) model. The VS model is a semi-empirical yet highly accurate model traditionally used to describe the I-V characteristics of metal-oxide-semiconductor field effect transistors (MOSFETs) from the linear region of operation all the way through the saturation region. The goal of this project is to use the Landauer approach and transmission theory of the MOSFET applied to the MIT Virtual Source model to simulate the I-V characteristics of an extremely thin silicon on insulator (ETSOI) N-MOSFET, as well as a III-V high electron mobility transistor (HEMT).